Floating Gate sensor for in-vivo dosimetry in radiation therapies: design and first characterization
A floating gate dosimeter was designed and fabricated in a standard CMOS technology. The design guides and characterization are presented. The characterization included the controlled charging by tunneling of the floating gate, and its discharging under irradiation while measuring the transistor dra...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2017 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/20189 |
| Acceso en línea: | http://hdl.handle.net/11336/20189 |
| Access Level: | acceso abierto |
| Palabra clave: | MOS DOSIMETER FLOATING GATE RADIATION EFFECTS https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Sumario: | A floating gate dosimeter was designed and fabricated in a standard CMOS technology. The design guides and characterization are presented. The characterization included the controlled charging by tunneling of the floating gate, and its discharging under irradiation while measuring the transistor drain current whose change is the measure of the absorbed dose. The resolution of the obtained device is close to 1 cGy satisfying the requirements for most radiation therapies dosimetry. Pending statistical proofs, the dosimeter is a potential candidate for wide in-vivo control of radiotherapy treatments. |
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