Chemical sensitivity of Mo gate MOS capacitors
Mo gate MOS capacitors exhibit a negative shift of their C-V characteristic by up to 240 mV, at 125°C, in response to 1000 ppm hydrogen, in controlled nitrogen atmospheres. The experimental methods for obtaining capacitance and conductance, as a function of polarisation voltage, as well as the relev...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2006 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/82208 |
| Acceso en línea: | http://hdl.handle.net/11336/82208 |
| Access Level: | acceso abierto |
| Palabra clave: | MOS device Mo gate Hydrogen sensitivity https://purl.org/becyt/ford/1.4 https://purl.org/becyt/ford/1 |
| Sumario: | Mo gate MOS capacitors exhibit a negative shift of their C-V characteristic by up to 240 mV, at 125°C, in response to 1000 ppm hydrogen, in controlled nitrogen atmospheres. The experimental methods for obtaining capacitance and conductance, as a function of polarisation voltage, as well as the relevant equivalent circuits are reviewed. The single-state interface state density, at the semiconductor-dielectric interface, decreases from 2.66 1011 cm-2e-v-1, in pure nitrogen, to 2.5 1011cm-2e-v-1 in 1000 ppm hydrogen in nitrogen mixtures, at this temperature. |
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