Evidence of the miniband formation in InGaAsP/InP superlattices
The formation of the miniband electron energy structure was explored in doped InGaAs/InP superlattices with different periods. The analysis of the Raman data allowed us to conclude that in spite of the defect structure of the layers constituting the superlattices, their super-periodicity was well de...
| Autores: | , , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2006 |
| País: | Argentina |
| Recursos: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/85675 |
| Acesso em linha: | http://hdl.handle.net/11336/85675 |
| Access Level: | acceso abierto |
| Palavra-chave: | Minibands Superlattice InGaAs/InP Raman https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Resumo: | The formation of the miniband electron energy structure was explored in doped InGaAs/InP superlattices with different periods. The analysis of the Raman data allowed us to conclude that in spite of the defect structure of the layers constituting the superlattices, their super-periodicity was well defined. The quantitative proof of the conditions for break-down of the Raman selection rules is presented: the emergence of the selection rules of the coupled plasmon-LO phonon vibrations was demonstrated to occur due to the increase of their coherence lengths. In addition, the expected anisotropy of the effective electron masses was found by high-field magnetoresistance. |
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