Miniband structure analysis of n-type delta-doped GaAs superlattices
The miniband structure of n-type delta-doped GaAs superlattices is studied using the nearest neighborssp3s§tight-binding model includingspin. The confining potential caused by the ionized impurities is obtained analytically within the lines of the Thomas-Fermi approximation.This potential is conside...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2007 |
| País: | México |
| Institución: | Universidad Autónoma de Zacatecas |
| Repositorio: | Redalyc-UAZ |
| OAI Identifier: | oai:redalyc.org:57036163023 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=57036163023 |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas Delta tight binding model miniband structure doped superlattices |
| Sumario: | The miniband structure of n-type delta-doped GaAs superlattices is studied using the nearest neighborssp3s§tight-binding model includingspin. The confining potential caused by the ionized impurities is obtained analytically within the lines of the Thomas-Fermi approximation.This potential is considered as an external perturbation in the tight-binding methodology and it is added to the diagonal terms of the tight-binding Hamiltonian. Special attention is paid to the miniband energy-width variation caused by the change in the impurity density and theinterwell distance. The results are compared with the available experimental and theoretical data and a good agreement is found. |
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