High resolution X-Ray diffraction analysis of InGaAs/InP superlattices
The interfacial properties of lattice-matched InGaAs/InP superlattice (SL) structures grown by gas source molecular beam epitaxy were investigated by high resolution x-ray diffraction (HRXRD). SLs with various periods were grown to determine the contributions of the interface layers to the structura...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2006 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/85672 |
| Acceso en línea: | http://hdl.handle.net/11336/85672 |
| Access Level: | acceso abierto |
| Palabra clave: | InGaAs/InP superlattice X-ray diffraction InGaAsP https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Sumario: | The interfacial properties of lattice-matched InGaAs/InP superlattice (SL) structures grown by gas source molecular beam epitaxy were investigated by high resolution x-ray diffraction (HRXRD). SLs with various periods were grown to determine the contributions of the interface layers to the structural properties of the SLs. The HRXRD curves exhibited a number of features indicative of interfacial layers, including weak even-order satellite peaks, and a zero-order diffraction peak that shifted toward lower diffraction angles with decreasing SL period. A detailed structural model is proposed to explain these observations, consisting of strained InAsP and InGaAsP monolayers due to the group-V gas switching and atomic exchange at the SL interfaces. |
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