Photoluminescence of ingaas/inp grown by molecular beam epitaxy
Photoluminescence (PL) measurements due to temperature and excitation power were carried out in as function of sample containing a In0,53Ga0,47. As layer, grown by Molecular Beam Epitaxy on an InP substrate. The origins of the several luminescence processes observed at low temperature were determine...
| Autores: | , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2004 |
| País: | Brasil |
| Institución: | Universidade Estadual de Londrina (UEL) |
| Repositorio: | Revista Semina: Ciências Exatas e Tecnológicas (Online) |
| Idioma: | portugués |
| OAI Identifier: | oai:ojs2.ojs.uel.br:article/1573 |
| Acceso en línea: | https://ojs.uel.br/revistas/uel/index.php/semexatas/article/view/1573 |
| Access Level: | acceso abierto |
| Palabra clave: | InGaAs/InP Photoluminescence. Fotoluminescência. Fotoluminescência |
| Sumario: | Photoluminescence (PL) measurements due to temperature and excitation power were carried out in as function of sample containing a In0,53Ga0,47. As layer, grown by Molecular Beam Epitaxy on an InP substrate. The origins of the several luminescence processes observed at low temperature were determined by studying their different behaviors with increasing temperature and excitation power and by comparing the results with the data found in the literature. The following transitions have been identified: one transition involving localized excitons and two transitions involving acceptor impurities. A review of the main works published in the literature related to the optical transitions observed at low temperature in InGaAs/InP is also presented. |
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