Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide
This research was funded by the Research Management Office (DGI) of the Pontificia Universidad Católica del Perú (PUCP). The authors have been supported by the PUCP under the PhD scholarship program Huiracocha (J A Guerra) and by the National Council of Science and Technology (CONCYTEC) under the sc...
| Autores: | , , , , , , |
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| Formato: | artículo |
| Fecha de publicación: | 2016 |
| País: | Perú |
| Recursos: | Consejo Nacional de Ciencia Tecnología e Innovación |
| Repositorio: | CONCYTEC-Institucional |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.concytec.gob.pe:20.500.12390/644 |
| Acesso em linha: | https://hdl.handle.net/20.500.12390/644 https://doi.org/10.1557/adv.2016.422 |
| Access Level: | acceso abierto |
| Palavra-chave: | Thin films Absorption spectroscopy Amorphous films Amorphous materials Energy gap Hydrogenation Optical properties Silicon Silicon carbide Band gap energy Band gap engineering Deposition process General equations Hydrogen dilution Hydrogenated silicon carbide Post deposition annealing Simple modeling Amorphous silicon https://purl.org/pe-repo/ocde/ford#2.04.01 |
| Resumo: | This research was funded by the Research Management Office (DGI) of the Pontificia Universidad Católica del Perú (PUCP). The authors have been supported by the PUCP under the PhD scholarship program Huiracocha (J A Guerra) and by the National Council of Science and Technology (CONCYTEC) under the scholarships granted to the PUCP (J R Angulo and J Llamoza). The author would like to thank Prof Dr H P Strunk, F Benz and Dr Y Weng of the University of Stuttgart for the TEM measurements. |
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