Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide

This research was funded by the Research Management Office (DGI) of the Pontificia Universidad Católica del Perú (PUCP). The authors have been supported by the PUCP under the PhD scholarship program Huiracocha (J A Guerra) and by the National Council of Science and Technology (CONCYTEC) under the sc...

Full description

Bibliographic Details
Authors: Guerra J.A., Montañez L.M., Tucto K., Angulo J., Töfflinger J.A., Winnaker A., Weingärtner R.
Format: article
Publication Date:2016
Country:Perú
Institution:Consejo Nacional de Ciencia Tecnología e Innovación
Repository:CONCYTEC-Institucional
Language:English
OAI Identifier:oai:repositorio.concytec.gob.pe:20.500.12390/644
Online Access:https://hdl.handle.net/20.500.12390/644
https://doi.org/10.1557/adv.2016.422
Access Level:Open access
Keyword:Thin films
Absorption spectroscopy
Amorphous films
Amorphous materials
Energy gap
Hydrogenation
Optical properties
Silicon
Silicon carbide
Band gap energy
Band gap engineering
Deposition process
General equations
Hydrogen dilution
Hydrogenated silicon carbide
Post deposition annealing
Simple modeling
Amorphous silicon
https://purl.org/pe-repo/ocde/ford#2.04.01
Description
Summary:This research was funded by the Research Management Office (DGI) of the Pontificia Universidad Católica del Perú (PUCP). The authors have been supported by the PUCP under the PhD scholarship program Huiracocha (J A Guerra) and by the National Council of Science and Technology (CONCYTEC) under the scholarships granted to the PUCP (J R Angulo and J Llamoza). The author would like to thank Prof Dr H P Strunk, F Benz and Dr Y Weng of the University of Stuttgart for the TEM measurements.

Similar Items