FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios
Article
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| Format: | article |
| Status: | Published version |
| Publication Date: | 2012 |
| Country: | México |
| Institution: | Instituto Politécnico Nacional |
| Repository: | Repositorio Digital del IPN |
| OAI Identifier: | oai:www.repositoriodigital.ipn.mx:123456789/9095 |
| Online Access: | http://www.repositoriodigital.ipn.mx/handle/123456789/9095 |
| Access Level: | Open access |
| Keyword: | Hydrogenated amorphous silicon |
| Summary: | Article |
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