Performance improvement of low-temperature a-SiGe:H thin-film transistors
This paper presents the study of an interface preparation procedure in the source/drain regions of the active layer, prior to deposit the n+ a-Ge:H contact layer in the fabrication process of low-temperature a-SiGe:H thin-film transistors. The devices were fabricated on corning 1737 substrates at 20...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2012 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/2104 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2104 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Inspec/Thin-film transistor info:eu-repo/classification/Inspec/Hydrogenated amorphous silicon–germanium info:eu-repo/classification/Inspec/Hydrogen plasma info:eu-repo/classification/Inspec/Low-temperature info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | This paper presents the study of an interface preparation procedure in the source/drain regions of the active layer, prior to deposit the n+ a-Ge:H contact layer in the fabrication process of low-temperature a-SiGe:H thin-film transistors. The devices were fabricated on corning 1737 substrates at 200 °C. The improvement in metal–semiconductor interface by the interface preparation procedure was demonstrated. This interface improvement translates in higher mobility and better values of off-current, on/off-current ratio, subthreshold slope and threshold voltage. |
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