Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 °C
High-quality epitaxial silicon thin films have been deposited by plasma-enhanced chemical vapor deposition (PECVD) at 200 °C in a standard radiofrequency (RF) PECVD reactor. We optimized a silicon tetrafluoride (SiF₄) plasma to clean the surface of <100> crystalline silicon wafers and without...
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2013 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/2320 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2320 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Inspec/High-quality info:eu-repo/classification/Inspec/Epitaxial silicon info:eu-repo/classification/Inspec/Standard radiofrequency info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | High-quality epitaxial silicon thin films have been deposited by plasma-enhanced chemical vapor deposition (PECVD) at 200 °C in a standard radiofrequency (RF) PECVD reactor. We optimized a silicon tetrafluoride (SiF₄) plasma to clean the surface of <100> crystalline silicon wafers and without breaking vacuum, an epitaxial silicon film was grown from SiF₄, hydrogen (H₂), and argon (Ar) gas mixtures. We demonstrate that the H₂/SiF₄ flow rate ratio is a key parameter to grow high-quality epitaxial silicon films. Moreover, by changing this ratio, we can fine-tune the composition of the interface between the crystalline silicon (c-Si) wafer and the epitaxial film. In this way, at low values of the H₂/SiF₄ flow rate ratio, an abrupt interface is achieved. On the contrary, by increasing this ratio we can obtain a porous and fragile interface layer, composed of hydrogen-rich microcavities, which allows the transfer of the epitaxial film to foreign substrates. |
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