Technological aspects of growth and optical properties of thin CIGS films

The paper discusses the results of structural and optical investigations of CuInxGa1-xSe2 (CIGS) semiconductor films with molar composition 0≤x≤1 obtained by thermal evaporation in vacuum. Experimental methods used to characterize the materials included ellipsometry measurements...

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Detalles Bibliográficos
Autores: V. V. Gorley, P. P. Horley, Y. V. Vorobiev, V. V. Khomyak, S. V. Bilichuk, J. González Hernández
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2004
País:México
Institución:Centro de Investigación y de Estudios Avanzados del IPN
Repositorio:Redalyc-CINVESTAV
OAI Identifier:oai:redalyc.org:94217303
Acceso en línea:https://www.redalyc.org/articulo.oa?id=94217303
Access Level:acceso abierto
Palabra clave:Física, Astronomía y Matemáticas
CIGS
Kramers
Sputtering
Thin films
Ellipsometry
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spelling Technological aspects of growth and optical properties of thin CIGS filmsV. V. GorleyP. P. HorleyY. V. VorobievV. V. KhomyakS. V. BilichukJ. González HernándezFísica, Astronomía y MatemáticasCIGSKramersSputteringThin filmsEllipsometryThe paper discusses the results of structural and optical investigations of CuInxGa1-xSe2 (CIGS) semiconductor films with molar composition 0&#8804;x&#8804;1 obtained by thermal evaporation in vacuum. Experimental methods used to characterize the materials included ellipsometry measurements in the 250-800 nm wavelength range and X-ray structural analysis, which proved the polycrystalline nature of the films with chalcopyrite structure and a preferred direction (112). Surface investigation performed with SEM and AFM reported rough character of the film surface. Spectral dependence of real and imaginary parts of dielectric constant was investigated using Kramers-Kronig relation. It was shown that for the spectral range &#955;<0.5 µm, the dielectric components of CuIn0.2Ga0.8Se2 do not obey the principle of causality, which could be a consequence of light scattering peculiarities over statistically uneven film surface. The position of energy levels of the valence band of CuIn0.2Ga0.8Se2 was estimated for the wavelengths 0.50< &#955;<0.84µm.Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.2004info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdf1665-3521https://www.redalyc.org/articulo.oa?id=94217303Superficies y vacío (México) Num.3 Vol.17reponame:Redalyc-CINVESTAVinstname:Centro de Investigación y de Estudios Avanzados del IPNinstacron:CINVESTAVenhttp://www.redalyc.org/revista.oa?id=942Superficies y vacíoinfo:eu-repo/semantics/openAccessoai:redalyc.org:942173032024-08-23T16:11:46Z
dc.title.none.fl_str_mv Technological aspects of growth and optical properties of thin CIGS films
title Technological aspects of growth and optical properties of thin CIGS films
spellingShingle Technological aspects of growth and optical properties of thin CIGS films
V. V. Gorley
Física, Astronomía y Matemáticas
CIGS
Kramers
Sputtering
Thin films
Ellipsometry
title_short Technological aspects of growth and optical properties of thin CIGS films
title_full Technological aspects of growth and optical properties of thin CIGS films
title_fullStr Technological aspects of growth and optical properties of thin CIGS films
title_full_unstemmed Technological aspects of growth and optical properties of thin CIGS films
title_sort Technological aspects of growth and optical properties of thin CIGS films
dc.creator.none.fl_str_mv V. V. Gorley
P. P. Horley
Y. V. Vorobiev
V. V. Khomyak
S. V. Bilichuk
J. González Hernández
author V. V. Gorley
author_facet V. V. Gorley
P. P. Horley
Y. V. Vorobiev
V. V. Khomyak
S. V. Bilichuk
J. González Hernández
author_role author
author2 P. P. Horley
Y. V. Vorobiev
V. V. Khomyak
S. V. Bilichuk
J. González Hernández
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Física, Astronomía y Matemáticas
CIGS
Kramers
Sputtering
Thin films
Ellipsometry
topic Física, Astronomía y Matemáticas
CIGS
Kramers
Sputtering
Thin films
Ellipsometry
description The paper discusses the results of structural and optical investigations of CuInxGa1-xSe2 (CIGS) semiconductor films with molar composition 0&#8804;x&#8804;1 obtained by thermal evaporation in vacuum. Experimental methods used to characterize the materials included ellipsometry measurements in the 250-800 nm wavelength range and X-ray structural analysis, which proved the polycrystalline nature of the films with chalcopyrite structure and a preferred direction (112). Surface investigation performed with SEM and AFM reported rough character of the film surface. Spectral dependence of real and imaginary parts of dielectric constant was investigated using Kramers-Kronig relation. It was shown that for the spectral range &#955;<0.5 µm, the dielectric components of CuIn0.2Ga0.8Se2 do not obey the principle of causality, which could be a consequence of light scattering peculiarities over statistically uneven film surface. The position of energy levels of the valence band of CuIn0.2Ga0.8Se2 was estimated for the wavelengths 0.50< &#955;<0.84µm.
publishDate 2004
dc.date.none.fl_str_mv 2004
dc.type.none.fl_str_mv info:eu-repo/semantics/publishedVersion
info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv 1665-3521
https://www.redalyc.org/articulo.oa?id=94217303
identifier_str_mv 1665-3521
url https://www.redalyc.org/articulo.oa?id=94217303
dc.language.none.fl_str_mv en
language_invalid_str_mv en
dc.relation.none.fl_str_mv http://www.redalyc.org/revista.oa?id=942
dc.rights.none.fl_str_mv Superficies y vacío
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Superficies y vacío
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
publisher.none.fl_str_mv Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
dc.source.none.fl_str_mv Superficies y vacío (México) Num.3 Vol.17
reponame:Redalyc-CINVESTAV
instname:Centro de Investigación y de Estudios Avanzados del IPN
instacron:CINVESTAV
instname_str Centro de Investigación y de Estudios Avanzados del IPN
instacron_str CINVESTAV
institution CINVESTAV
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collection Redalyc-CINVESTAV
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repository.mail.fl_str_mv
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