Technological aspects of growth and optical properties of thin CIGS films
The paper discusses the results of structural and optical investigations of CuInxGa1-xSe2 (CIGS) semiconductor films with molar composition 0≤x≤1 obtained by thermal evaporation in vacuum. Experimental methods used to characterize the materials included ellipsometry measurements...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2004 |
| País: | México |
| Institución: | Centro de Investigación y de Estudios Avanzados del IPN |
| Repositorio: | Redalyc-CINVESTAV |
| OAI Identifier: | oai:redalyc.org:94217303 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=94217303 |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas CIGS Kramers Sputtering Thin films Ellipsometry |
| Sumario: | The paper discusses the results of structural and optical investigations of CuInxGa1-xSe2 (CIGS) semiconductor films with molar composition 0≤x≤1 obtained by thermal evaporation in vacuum. Experimental methods used to characterize the materials included ellipsometry measurements in the 250-800 nm wavelength range and X-ray structural analysis, which proved the polycrystalline nature of the films with chalcopyrite structure and a preferred direction (112). Surface investigation performed with SEM and AFM reported rough character of the film surface. Spectral dependence of real and imaginary parts of dielectric constant was investigated using Kramers-Kronig relation. It was shown that for the spectral range λ<0.5 µm, the dielectric components of CuIn0.2Ga0.8Se2 do not obey the principle of causality, which could be a consequence of light scattering peculiarities over statistically uneven film surface. The position of energy levels of the valence band of CuIn0.2Ga0.8Se2 was estimated for the wavelengths 0.50< λ<0.84µm. |
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