Electronic and optical properties of InAs(110)
The electronic and optical properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended, atomic-like, basis set. The surface electronic states are discussed in terms of their electronic character, and compared with other theoretical a...
| Autores: | , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2005 |
| País: | México |
| Institución: | Universidad Nacional Autónoma de México |
| Repositorio: | Redalyc-UNAM |
| OAI Identifier: | oai:redalyc.org:57063809 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=57063809 |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas III V surface surface states indium arsenide semiconductor surface |
| Sumario: | The electronic and optical properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended, atomic-like, basis set. The surface electronic states are discussed in terms of their electronic character, and compared with other theoretical approaches, and experimental observations. The surface electronic band structure and the Reflectance Anisotropy Spectrum (RAS) are calculated and discussed in terms of the surface electronic states and the atomic structure of the surface. |
|---|