Comparison of three un-cooled micro-bolometers configurations based on amorphous silicon–germanium thin films deposited by plasma
We present a comparative study of three configurations of un-cooled micro-bolometers based on amorphous silicon–germanium thin films deposited by plasma at low temperature and compatible with the IC technology. The temperature dependence of conductivity δ(T), current–voltage characteristics I(U) and...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2008 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/1092 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1092 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Amorphous semiconductors/Amorphous semiconductors info:eu-repo/classification/Germanium/Germanium info:eu-repo/classification/Silicon/Silicon info:eu-repo/classification/Sensors/Sensors info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | We present a comparative study of three configurations of un-cooled micro-bolometers based on amorphous silicon–germanium thin films deposited by plasma at low temperature and compatible with the IC technology. The temperature dependence of conductivity δ(T), current–voltage characteristics I(U) and current noise spectral density (NSD) have been measured in order to characterize and compare the performance characteristics, such as responsivity and detectivity in three configurations of micro-bolometers: (a) planar structure with a silicon–germanium intrinsic (a-SixGey:H) thermo-sensing film; (b) planar structure with a silicon–germanium–boron alloy (a-Six-GeyBz:H) thermo-sensing film and (c) sandwich structure with an intrinsic (a-SixGey:H) thermo-sensing film. The samples studied demonstrated different cell resistance Rc = 105–108 X and responsivities R1 = 101–10-3 A/W, while the values of detectivity D* were quite similar D* = (4–7) X 109 cm Hz1/2 W-1. |
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