Noise in micro-bolometers with silicon-germanium thermo-sensing layer
Low frequency noise in a-SixGey:H thermo-sensing films, on glass and in micro-bolometers of planar and sandwich structures based on the same material has been studied at different temperatures. The noise spectra had the form of the 1/f-like noise with the frequency exponent within the range of 0.8 t...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2010 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/1491 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1491 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Silicon-germanium films/Silicon-germanium films info:eu-repo/classification/Plasma deposition/Plasma deposition info:eu-repo/classification/Electrical properties and measurements/Electrical properties and measurements info:eu-repo/classification/Electronic devices/Electronic devices info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | Low frequency noise in a-SixGey:H thermo-sensing films, on glass and in micro-bolometers of planar and sandwich structures based on the same material has been studied at different temperatures. The noise spectra had the form of the 1/f-like noise with the frequency exponent within the range of 0.8 to 1.6 depending on the sample and temperature. In the temperature range from T = 340 to 400 K the amplitude of the noise and current (at constant voltage) increased. These dependences can be described as a thermal activated process with energies of EaS/I = 0.63 eV and Eafilm = 0.34 eV for relative spectral noise density of the current fluctuations and DC current, respectively. |
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