Photoluminescence study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy with in-situ / exsitu growth interruptions
The specific properties of quantum wells (QWs) grown by molecular beam epitaxy (MBE) are directly affected by severalaspects, such as non-intentional incorporated impurities, alloy disorder, interface roughness, etc. These aspects stronglydepend on the particular process used during the MBE growth....
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2001 |
| País: | México |
| Institución: | Instituto Politécnico Nacional |
| Repositorio: | Redalyc-IPN |
| OAI Identifier: | oai:redalyc.org:94201209 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=94201209 |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas in Quantum wells situ processing growth interruption molecular beam epitaxy |
| Sumario: | The specific properties of quantum wells (QWs) grown by molecular beam epitaxy (MBE) are directly affected by severalaspects, such as non-intentional incorporated impurities, alloy disorder, interface roughness, etc. These aspects stronglydepend on the particular process used during the MBE growth. In this work, we present results of a photoluminescencespectroscopy (PL) study of AlxGa1-x As / GaAs QWs grown by MBE on GaAs buffer layers which were processed by exsituor in -situ growth interruptions. The QWs exhibit drastic c hanges in their PL spectra depending on the type ofinterruption process performed on the GaAs buffer layer surface. Roughness at the QWs interfaces has been calculatedand correlated with the growth interruption process |
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