InAs quantum dots grown on GaAs (100) surfaces subjected to novel in-situ treatments
Novel in-situ treatments were performed to GaAs(100) surfaces in order to improve the size homogeneity of self-assembled InAs quantumdots (QDs). The treatments consisted in exposing the GaAs surfaces at high temperature for 10 seconds with the As4- shutter closed. In thefirst experiment, the GaAs su...
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2005 |
| País: | México |
| Institución: | Universidad Autónoma de San Luis Potosí |
| Repositorio: | Redalyc-UASLP |
| OAI Identifier: | oai:redalyc.org:57063902 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=57063902 https://www.redalyc.org/journal/570/57063902/ https://www.redalyc.org/journal/570/57063902/html/ https://www.redalyc.org/journal/570/57063902/57063902.epub https://www.redalyc.org/journal/570/57063902/movil |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas V materials quantum dots Nanoestructures semiconducting III molecular beam epitaxy |
| Sumario: | Novel in-situ treatments were performed to GaAs(100) surfaces in order to improve the size homogeneity of self-assembled InAs quantumdots (QDs). The treatments consisted in exposing the GaAs surfaces at high temperature for 10 seconds with the As4- shutter closed. In thefirst experiment, the GaAs surface was just kept under no fluxes during 10 seconds, while in another growth the Si shutter was opened duringthe As4 flux interruption. Both experiments were compared with a conventionally grown sample. Remarkable differences in the growthkinetics were observed when the InAs deposition was performed on different treated GaAs surfaces. The thermal treatment performed underno Si-flux extended the two to three-dimensional growth transition at much larger InAs thickness. On the contrary, the Si-treated sampleshowed an earlier lattice relaxation as compared with the reference sample. As for the final topology of the samples both treatments decreasedthe QDs diameter and height dispersion as compared with the conventionally grown sample. Therefore, a significant improvement on thesize distribution of QDs was induced by the novel in-situ treatments, which also reduced the full width at half maximum (FWHM) of thephotoluminescence (PL) emission spectra. Additionally, PL experiments showed a clear correlation between the dots size increase and theemission peak redshift observed for the QDs grown on GaAs surfaces subjected to the different treatments. |
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