The effect of Er3+ doping on the physical properties of CdSe thin films deposited by chemical bath

CdSe thin films were prepared by a chemical bath on glass substrates and doped with erbium during the growing process at 70°C. Eight impurity levels were obtained by changing the relative volume of the salt solution containing Er in the total CdSe growing solution. The relative volume of the Er–salt...

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Autores: R.B. López–Flores, O. Portillo–Moreno, R. Lozada–Morales, R. Palomino–Merino, M.A. Hernández Espinosa, N. Korneev Zabello, A.G. Rojas Hernández, S.A. Tomas, O. Zelaya–Angel
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2006
País:México
Institución:Instituto Politécnico Nacional
Repositorio:Redalyc-IPN
OAI Identifier:oai:redalyc.org:57028295012
Acceso en línea:https://www.redalyc.org/articulo.oa?id=57028295012
Access Level:acceso abierto
Palabra clave:Física, Astronomía y Matemáticas
II
thin films
rare earths
VI semiconductor
Chemical Bath Deposition (CB)
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spelling The effect of Er3+ doping on the physical properties of CdSe thin films deposited by chemical bathR.B. López–FloresO. Portillo–MorenoR. Lozada–MoralesR. Palomino–MerinoM.A. Hernández EspinosaN. Korneev ZabelloA.G. Rojas HernándezS.A. TomasO. Zelaya–AngelFísica, Astronomía y MatemáticasIIthin filmsrare earthsVI semiconductorChemical Bath Deposition (CB)CdSe thin films were prepared by a chemical bath on glass substrates and doped with erbium during the growing process at 70°C. Eight impurity levels were obtained by changing the relative volume of the salt solution containing Er in the total CdSe growing solution. The relative volume of the Er–salt solution had the values: 2, 5, 8, 10, 15, 18, 25 and 30%. The electrical, structural, optical and photoconductive properties were characterized. Important changes in the energy band gap, in the photoconductance, and in the refractive index were observed in the CdSe layers as a result of the concentration level of Er in the semiconductor.Sociedad Mexicana de Física A.C.2006info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdf0035-001Xhttps://www.redalyc.org/articulo.oa?id=57028295012Revista Mexicana de Física (México) Num.2 Vol.52reponame:Redalyc-IPNinstname:Instituto Politécnico Nacionalinstacron:IPNenhttp://www.redalyc.org/revista.oa?id=570Revista Mexicana de Físicainfo:eu-repo/semantics/openAccessoai:redalyc.org:570282950122026-01-29T02:55:11Z
dc.title.none.fl_str_mv The effect of Er3+ doping on the physical properties of CdSe thin films deposited by chemical bath
title The effect of Er3+ doping on the physical properties of CdSe thin films deposited by chemical bath
spellingShingle The effect of Er3+ doping on the physical properties of CdSe thin films deposited by chemical bath
R.B. López–Flores
Física, Astronomía y Matemáticas
II
thin films
rare earths
VI semiconductor
Chemical Bath Deposition (CB)
title_short The effect of Er3+ doping on the physical properties of CdSe thin films deposited by chemical bath
title_full The effect of Er3+ doping on the physical properties of CdSe thin films deposited by chemical bath
title_fullStr The effect of Er3+ doping on the physical properties of CdSe thin films deposited by chemical bath
title_full_unstemmed The effect of Er3+ doping on the physical properties of CdSe thin films deposited by chemical bath
title_sort The effect of Er3+ doping on the physical properties of CdSe thin films deposited by chemical bath
dc.creator.none.fl_str_mv R.B. López–Flores
O. Portillo–Moreno
R. Lozada–Morales
R. Palomino–Merino
M.A. Hernández Espinosa
N. Korneev Zabello
A.G. Rojas Hernández
S.A. Tomas
O. Zelaya–Angel
author R.B. López–Flores
author_facet R.B. López–Flores
O. Portillo–Moreno
R. Lozada–Morales
R. Palomino–Merino
M.A. Hernández Espinosa
N. Korneev Zabello
A.G. Rojas Hernández
S.A. Tomas
O. Zelaya–Angel
author_role author
author2 O. Portillo–Moreno
R. Lozada–Morales
R. Palomino–Merino
M.A. Hernández Espinosa
N. Korneev Zabello
A.G. Rojas Hernández
S.A. Tomas
O. Zelaya–Angel
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Física, Astronomía y Matemáticas
II
thin films
rare earths
VI semiconductor
Chemical Bath Deposition (CB)
topic Física, Astronomía y Matemáticas
II
thin films
rare earths
VI semiconductor
Chemical Bath Deposition (CB)
description CdSe thin films were prepared by a chemical bath on glass substrates and doped with erbium during the growing process at 70°C. Eight impurity levels were obtained by changing the relative volume of the salt solution containing Er in the total CdSe growing solution. The relative volume of the Er–salt solution had the values: 2, 5, 8, 10, 15, 18, 25 and 30%. The electrical, structural, optical and photoconductive properties were characterized. Important changes in the energy band gap, in the photoconductance, and in the refractive index were observed in the CdSe layers as a result of the concentration level of Er in the semiconductor.
publishDate 2006
dc.date.none.fl_str_mv 2006
dc.type.none.fl_str_mv info:eu-repo/semantics/publishedVersion
info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv 0035-001X
https://www.redalyc.org/articulo.oa?id=57028295012
identifier_str_mv 0035-001X
url https://www.redalyc.org/articulo.oa?id=57028295012
dc.language.none.fl_str_mv en
language_invalid_str_mv en
dc.relation.none.fl_str_mv http://www.redalyc.org/revista.oa?id=570
dc.rights.none.fl_str_mv Revista Mexicana de Física
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Revista Mexicana de Física
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Sociedad Mexicana de Física A.C.
publisher.none.fl_str_mv Sociedad Mexicana de Física A.C.
dc.source.none.fl_str_mv Revista Mexicana de Física (México) Num.2 Vol.52
reponame:Redalyc-IPN
instname:Instituto Politécnico Nacional
instacron:IPN
instname_str Instituto Politécnico Nacional
instacron_str IPN
institution IPN
reponame_str Redalyc-IPN
collection Redalyc-IPN
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 14.965132

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