The effect of Er3+ doping on the physical properties of CdSe thin films deposited by chemical bath
CdSe thin films were prepared by a chemical bath on glass substrates and doped with erbium during the growing process at 70°C. Eight impurity levels were obtained by changing the relative volume of the salt solution containing Er in the total CdSe growing solution. The relative volume of the Er–salt...
| Autores: | , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2006 |
| País: | México |
| Institución: | Instituto Politécnico Nacional |
| Repositorio: | Redalyc-IPN |
| OAI Identifier: | oai:redalyc.org:57028295012 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=57028295012 |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas II thin films rare earths VI semiconductor Chemical Bath Deposition (CB) |
| Sumario: | CdSe thin films were prepared by a chemical bath on glass substrates and doped with erbium during the growing process at 70°C. Eight impurity levels were obtained by changing the relative volume of the salt solution containing Er in the total CdSe growing solution. The relative volume of the Er–salt solution had the values: 2, 5, 8, 10, 15, 18, 25 and 30%. The electrical, structural, optical and photoconductive properties were characterized. Important changes in the energy band gap, in the photoconductance, and in the refractive index were observed in the CdSe layers as a result of the concentration level of Er in the semiconductor. |
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