Cathodoluminescence and photoluminescence of highly luminescent CdSe/ZnS quantum dot composites
We report room-temperature cathodoluminescence and photoluminescence spectra originating from ZnS overcoated CdSenanocrystals, 33 and 42 Å in diameter, embedded in a ZnS matrix. The thin-filmquantum dot composites were synthesized by electrospray organometallic chemical vapor deposition.Cathodolumin...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1997 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:116297 |
| Acceso en línea: | https://ddd.uab.cat/record/116297 https://dx.doi.org/urn:doi:10.1063/1.119043 |
| Access Level: | acceso abierto |
| Palabra clave: | II-VI semiconductors Cathodoluminescence Photoluminescence Quantum dots Nanocrystals Current density Organometallic chemical vapor deposition Thin film composition Thin film deposition |
| Sumario: | We report room-temperature cathodoluminescence and photoluminescence spectra originating from ZnS overcoated CdSenanocrystals, 33 and 42 Å in diameter, embedded in a ZnS matrix. The thin-filmquantum dot composites were synthesized by electrospray organometallic chemical vapor deposition.Cathodoluminescence and photoluminescence are dominated by the sharp band-edge emission characteristic of the initial nanocrystals. The emission wavelength can be tuned in a broad window (470-650 nm) by varying the size of the dots. The cathodoluminescence intensity depends on the crystallinity of the ZnS matrix and the voltage and current density applied. |
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