Formation of SiOx nano-films at laser ablation of Si and composite SiC-ceramic
By methods of electron microscopy, atomic force microscopy, X-ray microanalysis the influence of continuous IR laser irradiation ( ∏ = 1064 nm, P = 240 mW, 175 W and 210 W) on Si, SiC, and SiC-Cr 5 Si 3 ceramics is investigated. It is established that the basic product of ablation is silicon. Depend...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2007 |
| País: | México |
| Institución: | Universidad Autónoma del Estado de Morelos |
| Repositorio: | Redalyc-UAEM |
| OAI Identifier: | oai:redalyc.org:57028299001 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=57028299001 |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas Si SiC SiO x films ablation |
| Sumario: | By methods of electron microscopy, atomic force microscopy, X-ray microanalysis the influence of continuous IR laser irradiation ( ∏ = 1064 nm, P = 240 mW, 175 W and 210 W) on Si, SiC, and SiC-Cr 5 Si 3 ceramics is investigated. It is established that the basic product of ablation is silicon. Depending on capacity of radiation, time of irradiation and composition of the gas environment on a surface of collection plate films of SiO x and SiO x :N, where x ∑ 2, are precipitated. At various stages of an irradiation (from a mode of evaporation up to plasma formation) a nano-films of various morphology are formed. |
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