Raman and Hall characterization of AlGaAs epilayers grown by MOCVD using elemental arsenic
MOCVD AlGaAs thin films were characterized using Raman and Hall measurements. The AlGaAs thin films were grownby MOCVD using metallic arsenic instead of arsine as the arsenic precursor. Some difficulties in the growth of AlGaAsby MOCVD are the composition homogeneity of the layers and the oxygen and...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2002 |
| País: | México |
| Institución: | Instituto Politécnico Nacional |
| Repositorio: | Redalyc-IPN |
| OAI Identifier: | oai:redalyc.org:94201506 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=94201506 |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas MOCVD AlGaAs Hall Effect Raman Spectroscopy |
| Sumario: | MOCVD AlGaAs thin films were characterized using Raman and Hall measurements. The AlGaAs thin films were grownby MOCVD using metallic arsenic instead of arsine as the arsenic precursor. Some difficulties in the growth of AlGaAsby MOCVD are the composition homogeneity of the layers and the oxygen and carbon incorporation during the growthprocess. The composition homogeneity of the films was demonstrated by the Raman measurements. Hall measurementson the samples showed highly compensated material. Samples grown at temperatures lower than 750°C were highlyresistive. Independently of the V/III ratio; the samples grown at higher temperatures were n-type. As the growthtemperature is increased the layers compensation decreases but the Raman spectra show the layers become moredefective |
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