Spectroscopic ellipsometry characterization of Er3+-doped titania thin films prepared by the sol-gel method
Titania thin films prepared by the sol-gel method were optically characterized by spectroscopic ellipsometry. These films were doped with Er3+ and supported on silicon wafers chemically activated by using the, dipping method. The dielectric function was modeled using the Forouhi-Bloomer model, which...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2001 |
| País: | México |
| Institución: | Universidad Nacional Autónoma de México |
| Repositorio: | Sistema de Información de la Facultad de Ciencias, UNAM |
| OAI Identifier: | oai:repositorio.fciencias.unam.mx:11154/2548 |
| Acceso en línea: | http://hdl.handle.net/11154/2548 |
| Access Level: | acceso abierto |
| Palabra clave: | Optics sol-gel method thin films ellipsometry film characterization |
| Sumario: | Titania thin films prepared by the sol-gel method were optically characterized by spectroscopic ellipsometry. These films were doped with Er3+ and supported on silicon wafers chemically activated by using the, dipping method. The dielectric function was modeled using the Forouhi-Bloomer model, which provides also the refractive index and the thickness of the film. |
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