Growth and characterization of Ge1-xSnx alloys grown on Ge(001) and GaAs(001)
Single crystal Ge1-xSnx alloys were grown on Ge(001) and GaAs(001) substrates using a RF magnetronSputtering. HRXRD and Raman spectroscopy were used to determine the Sn concentration of the alloys,HRXRD also shows that alloys with Sn<0.04 are pseudomorphic. Optical properties of the alloys werean...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2004 |
| País: | México |
| Institución: | Universidad Autónoma de San Luis Potosí |
| Repositorio: | Redalyc-UASLP |
| OAI Identifier: | oai:redalyc.org:94217403 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=94217403 |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas |
| Sumario: | Single crystal Ge1-xSnx alloys were grown on Ge(001) and GaAs(001) substrates using a RF magnetronSputtering. HRXRD and Raman spectroscopy were used to determine the Sn concentration of the alloys,HRXRD also shows that alloys with Sn<0.04 are pseudomorphic. Optical properties of the alloys wereanalysed in order to determinate the band gap transitions. |
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