Raman scattering from Ge1-xSnx (x<=0:14) alloys
Ge1-xSnx alloys with x concentration up to 0.14 were grown on Ge(001) and GaAs(001) substrates in a conventional R. F. Magnetron Sputtering system at low substrate temperatures. The structural characteristics of these alloys were studied for different Sn concentrations between 1 to 14 % by high reso...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2015 |
| País: | México |
| Institución: | Universidad Autónoma de San Luis Potosí |
| Repositorio: | Redalyc-UASLP |
| OAI Identifier: | oai:redalyc.org:57042691006 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=57042691006 |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas Raman space correlation model |
| Sumario: | Ge1-xSnx alloys with x concentration up to 0.14 were grown on Ge(001) and GaAs(001) substrates in a conventional R. F. Magnetron Sputtering system at low substrate temperatures. The structural characteristics of these alloys were studied for different Sn concentrations between 1 to 14 % by high resolution X ray diffraction, and Raman spectroscopy. Contrasting characteristics of the grown layers are observed if the Sn concentration is larger or smaller than 6 % as revealed by X-ray diffraction and Raman spectroscopy. |
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