Characterization of AlxGa1_xAs layers grown on (100) GaAs by Inetallic-arsenic-based-MOCVD

article

Bibliographic Details
Author:	Diaz Reyes, Joel
Format:	article
Status:	Published version
Publication Date:	2012
Country:	México
Institution:	Instituto Politécnico Nacional
Repository:	Repositorio Digital del IPN
OAI Identifier:	oai:www.repositoriodigital.ipn.mx:123456789/8592
Online Access:	http://www.repositoriodigital.ipn.mx/handle/123456789/8592
Access Level:	Open access
Keyword:	MOCVD Ha ll Effect SIMS Raman scactering 111-V semiconductor growth GaAs

Description
Summary:	article