Microbolometers fabricated with surface micromachining with a-Si-Ge:H thermo-sensing films

In this work we present the process flow for the fabrication of un-cooled IR detectors employing surface micro-machining techniques over silicon substrates. These detectors are based on thin films deposited by plasma at low temperatures. The thermo sensing film used is an intrinsic a-SixGe1-x:H film...

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Detalles Bibliográficos
Autores: MARIO MORENO MORENO, ANDREY KOSAREV, ALFONSO TORRES JACOME, ROBERTO AMBROSIO
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2008
País:México
Institución:Instituto Nacional de Astrofísica, Óptica y Electrónica
Repositorio:Repositorio Institucional del INAOE
Idioma:inglés
OAI Identifier:oai:inaoe.repositorioinstitucional.mx:1009/1247
Acceso en línea:http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1247
Access Level:acceso abierto
Palabra clave:info:eu-repo/classification/Germanium/Germanium
info:eu-repo/classification/IR detectors/IR detectors
info:eu-repo/classification/Plasma enhanced chemical vapor deposition/Plasma enhanced chemical vapor deposition
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
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spelling Microbolometers fabricated with surface micromachining with a-Si-Ge:H thermo-sensing filmsMARIO MORENO MORENOANDREY KOSAREVALFONSO TORRES JACOMEROBERTO AMBROSIOinfo:eu-repo/classification/Germanium/Germaniuminfo:eu-repo/classification/IR detectors/IR detectorsinfo:eu-repo/classification/Plasma enhanced chemical vapor deposition/Plasma enhanced chemical vapor depositioninfo:eu-repo/classification/cti/1info:eu-repo/classification/cti/22info:eu-repo/classification/cti/2203info:eu-repo/classification/cti/2203In this work we present the process flow for the fabrication of un-cooled IR detectors employing surface micro-machining techniques over silicon substrates. These detectors are based on thin films deposited by plasma at low temperatures. The thermo sensing film used is an intrinsic a-SixGe1-x:H film, which has demonstrated a very high temperature coefficient of resistance (TCR), and a moderated resistivity, these properties are better than those of the a-Si:H intrinsic film, which is commonly used in commercial IR devices. Two device configurations have been designed and fabricated, labeled planar and sandwich. The former is the configuration commonly used in commercial micro-bolometers, while the latter is proposed in order to reduce the high cell resistance observed in this kind of devices, without the necessity of doping the intrinsic film, which results in a decrement of the TCR and therefore in responsivity. Finally some performance characteristics of the devices studied are discussed in comparison with data reported in literature.World Scientific Publishing Company2008info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1247reponame:Repositorio Institucional del INAOEinstname:Instituto Nacional de Astrofísica, Óptica y Electrónicainstacron:INAOEengcitation:Moreno-Moreno, M. , et al., (2008). Microbolometers fabricated with surface micromachining with a-Si-Ge:H thermo-sensing films, International Journal of High Speed Electronics and Systems Vol. 18, (4): 1045–1054info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0oai:inaoe.repositorioinstitucional.mx:1009/12472024-08-28T03:22:53Z
dc.title.none.fl_str_mv Microbolometers fabricated with surface micromachining with a-Si-Ge:H thermo-sensing films
title Microbolometers fabricated with surface micromachining with a-Si-Ge:H thermo-sensing films
spellingShingle Microbolometers fabricated with surface micromachining with a-Si-Ge:H thermo-sensing films
MARIO MORENO MORENO
info:eu-repo/classification/Germanium/Germanium
info:eu-repo/classification/IR detectors/IR detectors
info:eu-repo/classification/Plasma enhanced chemical vapor deposition/Plasma enhanced chemical vapor deposition
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
title_short Microbolometers fabricated with surface micromachining with a-Si-Ge:H thermo-sensing films
title_full Microbolometers fabricated with surface micromachining with a-Si-Ge:H thermo-sensing films
title_fullStr Microbolometers fabricated with surface micromachining with a-Si-Ge:H thermo-sensing films
title_full_unstemmed Microbolometers fabricated with surface micromachining with a-Si-Ge:H thermo-sensing films
title_sort Microbolometers fabricated with surface micromachining with a-Si-Ge:H thermo-sensing films
dc.creator.none.fl_str_mv MARIO MORENO MORENO
ANDREY KOSAREV
ALFONSO TORRES JACOME
ROBERTO AMBROSIO
author MARIO MORENO MORENO
author_facet MARIO MORENO MORENO
ANDREY KOSAREV
ALFONSO TORRES JACOME
ROBERTO AMBROSIO
author_role author
author2 ANDREY KOSAREV
ALFONSO TORRES JACOME
ROBERTO AMBROSIO
author2_role author
author
author
dc.subject.none.fl_str_mv info:eu-repo/classification/Germanium/Germanium
info:eu-repo/classification/IR detectors/IR detectors
info:eu-repo/classification/Plasma enhanced chemical vapor deposition/Plasma enhanced chemical vapor deposition
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
topic info:eu-repo/classification/Germanium/Germanium
info:eu-repo/classification/IR detectors/IR detectors
info:eu-repo/classification/Plasma enhanced chemical vapor deposition/Plasma enhanced chemical vapor deposition
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
description In this work we present the process flow for the fabrication of un-cooled IR detectors employing surface micro-machining techniques over silicon substrates. These detectors are based on thin films deposited by plasma at low temperatures. The thermo sensing film used is an intrinsic a-SixGe1-x:H film, which has demonstrated a very high temperature coefficient of resistance (TCR), and a moderated resistivity, these properties are better than those of the a-Si:H intrinsic film, which is commonly used in commercial IR devices. Two device configurations have been designed and fabricated, labeled planar and sandwich. The former is the configuration commonly used in commercial micro-bolometers, while the latter is proposed in order to reduce the high cell resistance observed in this kind of devices, without the necessity of doping the intrinsic film, which results in a decrement of the TCR and therefore in responsivity. Finally some performance characteristics of the devices studied are discussed in comparison with data reported in literature.
publishDate 2008
dc.date.none.fl_str_mv 2008
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1247
url http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1247
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv citation:Moreno-Moreno, M. , et al., (2008). Microbolometers fabricated with surface micromachining with a-Si-Ge:H thermo-sensing films, International Journal of High Speed Electronics and Systems Vol. 18, (4): 1045–1054
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv World Scientific Publishing Company
publisher.none.fl_str_mv World Scientific Publishing Company
dc.source.none.fl_str_mv reponame:Repositorio Institucional del INAOE
instname:Instituto Nacional de Astrofísica, Óptica y Electrónica
instacron:INAOE
instname_str Instituto Nacional de Astrofísica, Óptica y Electrónica
instacron_str INAOE
institution INAOE
reponame_str Repositorio Institucional del INAOE
collection Repositorio Institucional del INAOE
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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