Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells
"Light emission in the three primary colors was achieved in cubic GaN/InGaN/GaN heterostructures grown by molecular beam epitaxy on MgO substrates in a single growth process. A heterostructure with four quantum wells with a width of 10 nm was grown; this quantum wells width decrease the segrega...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2016 |
| País: | México |
| Institución: | Instituto Potosino de Investigación Científica y Tecnológica |
| Repositorio: | Repositorio Institucional del IPICYT |
| OAI Identifier: | oai:ipicyt.repositorioinstitucional.mx:1010/1954 |
| Acceso en línea: | http://ipicyt.repositorioinstitucional.mx/jspui/handle/1010/1954 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Autor/A3. Quantum wells info:eu-repo/classification/Autor/A3. Molecular beam epitaxy info:eu-repo/classification/Autor/B2. Semiconducting III–V materials info:eu-repo/classification/Autor/B3. Heterojunction semiconductor devices info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 |
| Sumario: | "Light emission in the three primary colors was achieved in cubic GaN/InGaN/GaN heterostructures grown by molecular beam epitaxy on MgO substrates in a single growth process. A heterostructure with four quantum wells with a width of 10 nm was grown; this quantum wells width decrease the segregation effect of In. Photoluminescence emission produced four different emission signals: violet, blue, green-yellow and red. Thus, we were able to tune energy transitions in the visible spectrum modifying the In concentration in cubic InxGa1?xN ternary alloy." |
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