Quasi-3D model for lateral resonances on homogeneous BAW resonators

Lateral modes are responsible for the in-band spurious resonances that appear on BAW resonators, degrading the in-band filter response. In this work, a fast computational method based on the transmission line matrix (TLM) method is employed to model the lateral resonances of BAW resonators. Using th...

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Detalles Bibliográficos
Autores: Udaondo Guerrero, Carlos|||0000-0002-4251-0530, Collado Gómez, Juan Carlos|||0000-0002-8869-2739, Mateu Mateu, Jordi|||0000-0001-9833-9966
Tipo de recurso: artículo
Fecha de publicación:2023
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/398450
Acceso en línea:https://hdl.handle.net/2117/398450
https://dx.doi.org/10.3390/mi14111980
Access Level:acceso abierto
Palabra clave:Resonators
Surface waves
BAW resonator
Film Bulk acoustic resonator
Lamb wave
Solidly mounted resonator
Spurious modes
Ressonadors
Ones de superfície
Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Processament del senyal
Descripción
Sumario:Lateral modes are responsible for the in-band spurious resonances that appear on BAW resonators, degrading the in-band filter response. In this work, a fast computational method based on the transmission line matrix (TLM) method is employed to model the lateral resonances of BAW resonators. Using the precomputed dispersion curves of Lamb waves and an equivalent characteristic impedance for the TE1 mode, a network of transmission lines is used to calculate the magnitude of field distributions on the electrodes. These characteristics are specific to the stack layer configuration. The model’s implementation is based on nodal Y matrices, from which particle displacement profiles are coupled to the electric domain via piezoelectric constitutive relations. Consequently, the input impedance of the resonator is obtained. The model exhibits strong agreement with FEM simulations of FBARs and SMRs, and with measurements of several SMRs. The proposed model can provide accurate predictions of resonator input impedance, which is around 200 times faster than conventional FEM.