Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2devices

Two-dimensional semiconducting materials such as MoS2have gained significant attention for potential applications in electronic components due to their reduced dimensionality and exceptional electrical and optoelectronic properties. However, when reporting the performance of such 2D-based devices, o...

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Autores: Bastante, Pablo, Pucher, Thomas, Castellanos-Gómez, Andrés
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2024
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/383736
Acceso en línea:http://hdl.handle.net/10261/383736
https://api.elsevier.com/content/abstract/scopus_id/85204417148
Access Level:acceso abierto
Palabra clave:2D-based devices
air environment
electronic properties
hBN capping
vacuum thermal annealing
id ES_fc809a46ce065e3edce2a2e953a5bdb8
oai_identifier_str oai:digital.csic.es:10261/383736
network_acronym_str ES
network_name_str España
repository_id_str
spelling Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2devicesBastante, PabloPucher, ThomasCastellanos-Gómez, Andrés2D-based devicesair environmentelectronic propertieshBN cappingvacuum thermal annealingTwo-dimensional semiconducting materials such as MoS2have gained significant attention for potential applications in electronic components due to their reduced dimensionality and exceptional electrical and optoelectronic properties. However, when reporting the performance of such 2D-based devices, one needs to consider the effect of the environment in which the characterization is carried out. Air exposure has a non-negligible impact on the electronic performance and vacuum thermal annealing is an established method to decrease the effects of adsorbates. Nevertheless, when measurements are performed in ambient conditions these effects arise again. In this work, we study the changes in the electrical and optoelectronic properties of single-layer MoS2-based devices at air exposure after thermal annealing treatment. Measurements are carried out in anin-situvacuum thermal annealing system, enabling the recording of electrical performance degradation over time. Moreover, this work shows how hexagonal boron nitride (hBN) capping improves device performance, both in vacuum and after venting, as well as stability, by decreasing the degradation speed by around six times. The results suggest that vacuum thermal annealing and hBN capping are methods to mitigate the effects of air environment on these devices.This work was funded by the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation program (grant agreement n degrees 755655, ERC-StG 2017 project 2D-TOPSENSE), and the Ministry of Science and Innovation (Spain) through the projects PID2020-115566RB-I00 and TED2021-132267B-I00, and CEX2018-000805-M-19-2, from which P B acknowledges financial support, ref. PRE2019-091388. We also acknowledge funding from the EU FLAG-ERA project To2Dox (JTC-2019-009) and the Comunidad de Madrid through the CAIRO-CM Project (Y2020/NMT-6661). ChatGPT (GPT-3.5, OpenAI's large-scale language-generation model) has been used to improve the title.Peer reviewedIOP PublishingBastante, Pablo [0000-0001-6460-9892]Pucher, Thomas [0009-0005-2100-8241]Castellanos-Gómez, Andrés [0000-0002-3384-3405]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202520252024info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10261/383736https://api.elsevier.com/content/abstract/scopus_id/85204417148reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)InglésBastante, Pablo; Pucher, Thomas; Castellanos-Gómez, Andrés; 2025; Datasets for manuscript: Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2 devices [Dataset]; Zenodo; Version v2; https://doi.org/10.5281/zenodo.14782950https://doi.org/10.1088/1361-6528/ad77dcSíinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3837362026-05-22T06:33:51Z
dc.title.none.fl_str_mv Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2devices
title Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2devices
spellingShingle Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2devices
Bastante, Pablo
2D-based devices
air environment
electronic properties
hBN capping
vacuum thermal annealing
title_short Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2devices
title_full Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2devices
title_fullStr Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2devices
title_full_unstemmed Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2devices
title_sort Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2devices
dc.creator.none.fl_str_mv Bastante, Pablo
Pucher, Thomas
Castellanos-Gómez, Andrés
author Bastante, Pablo
author_facet Bastante, Pablo
Pucher, Thomas
Castellanos-Gómez, Andrés
author_role author
author2 Pucher, Thomas
Castellanos-Gómez, Andrés
author2_role author
author
dc.contributor.none.fl_str_mv Bastante, Pablo [0000-0001-6460-9892]
Pucher, Thomas [0009-0005-2100-8241]
Castellanos-Gómez, Andrés [0000-0002-3384-3405]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv 2D-based devices
air environment
electronic properties
hBN capping
vacuum thermal annealing
topic 2D-based devices
air environment
electronic properties
hBN capping
vacuum thermal annealing
description Two-dimensional semiconducting materials such as MoS2have gained significant attention for potential applications in electronic components due to their reduced dimensionality and exceptional electrical and optoelectronic properties. However, when reporting the performance of such 2D-based devices, one needs to consider the effect of the environment in which the characterization is carried out. Air exposure has a non-negligible impact on the electronic performance and vacuum thermal annealing is an established method to decrease the effects of adsorbates. Nevertheless, when measurements are performed in ambient conditions these effects arise again. In this work, we study the changes in the electrical and optoelectronic properties of single-layer MoS2-based devices at air exposure after thermal annealing treatment. Measurements are carried out in anin-situvacuum thermal annealing system, enabling the recording of electrical performance degradation over time. Moreover, this work shows how hexagonal boron nitride (hBN) capping improves device performance, both in vacuum and after venting, as well as stability, by decreasing the degradation speed by around six times. The results suggest that vacuum thermal annealing and hBN capping are methods to mitigate the effects of air environment on these devices.
publishDate 2024
dc.date.none.fl_str_mv 2024
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/383736
https://api.elsevier.com/content/abstract/scopus_id/85204417148
url http://hdl.handle.net/10261/383736
https://api.elsevier.com/content/abstract/scopus_id/85204417148
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Bastante, Pablo; Pucher, Thomas; Castellanos-Gómez, Andrés; 2025; Datasets for manuscript: Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2 devices [Dataset]; Zenodo; Version v2; https://doi.org/10.5281/zenodo.14782950
https://doi.org/10.1088/1361-6528/ad77dc
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869425428366622720
score 15,811543

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