Low Leakage Current ZnO Nanowire Schottky Photodiodes Built by Dielectrophoretic Contact
This work presents the characterization results of nanowire (NW) Schottky photodiodes fabricated from the dielectrophoretic contact between a ZnO NW and a Cu electrode. The device counter-electrode is fabricated using Pt focused ion beam deposition. The current-voltage characteristics exhibit rectif...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2015 |
| País: | España |
| Institución: | Universidad Autónoma de Madrid |
| Repositorio: | Biblos-e Archivo. Repositorio Institucional de la UAM |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.uam.es:10486/676313 |
| Acceso en línea: | http://hdl.handle.net/10486/676313 https://dx.doi.org/10.1109/LED.2015.2442678 |
| Access Level: | acceso abierto |
| Palabra clave: | Dielectrophoresis Schottky photodiodes ZnO Nanowires Ultraviolet photodetectors Física |
| Sumario: | This work presents the characterization results of nanowire (NW) Schottky photodiodes fabricated from the dielectrophoretic contact between a ZnO NW and a Cu electrode. The device counter-electrode is fabricated using Pt focused ion beam deposition. The current-voltage characteristics exhibit rectifying properties with a leakage current as low as 40 pA at-40 V. The fitting of the forward characteristics reveals a barrier height lowering under UV illumination along with a large reduction of the series resistance. At forward bias, responsivities of about 10 5 A/W are obtained above the bandgap energy. Under reverse bias, the responsivity reduces up to 10 4 A/W, but a higher ultraviolet/visible contrast and a faster response are observed. In those conditions, the barrier height lowering is fostered by the drift of photogenerated holes toward the interface with the Cu electrode, yielding lower barrier height values under illumination |
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