Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication
The interfacial state density existing in metal-insulator-semiconductor (MIS) structures was measured by deep level transient spectroscopy technique. The MIS structures were fabricated on InP substrates by direct deposition of silicon nitride (SiNxH) thin films by the electron cyclotron resonance me...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1999 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59266 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/59266 |
| Access Level: | acceso abierto |
| Palabra clave: | 537 Cyclotron-Resonance Films InP Stability Devices Traps. Electricidad Electrónica (Física) 2202.03 Electricidad |
| Sumario: | The interfacial state density existing in metal-insulator-semiconductor (MIS) structures was measured by deep level transient spectroscopy technique. The MIS structures were fabricated on InP substrates by direct deposition of silicon nitride (SiNxH) thin films by the electron cyclotron resonance method. In this work, we show that interfacial state density can be diminished without degrading electrical insulator properties by fabricating MIS structures based on a bi-layered insulator with different insulator compositions and different thickness. The effect of rapid thermal annealing treatment has been analysed in detail in these samples. An interface state density as low as 3x 10(11) cm(-2) eV(-1) was measured in some structures. |
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