Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy

5 pages, 4 figures.-- PACS nrs.: 68.55.Ag; 81.15.Hi.

Detalles Bibliográficos
Autores: Postigo, Pablo Aitor, Suárez Arias, Ferrán, Sanz-Hervás, A., Sangrador, J., Fonstad, C. G.
Tipo de recurso: artículo
Fecha de publicación:2008
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/11723
Acceso en línea:http://hdl.handle.net/10261/11723
Access Level:acceso abierto
Palabra clave:Gallium arsenide
III-V semiconductors
Indium compounds
Luminescence
Molecular beam epitaxial growth
Rapid thermal annealing
Reflection high energy electron diffraction
Semiconductor epitaxial layers
Semiconductor growth
X-ray diffraction
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spelling Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxyPostigo, Pablo AitorSuárez Arias, FerránSanz-Hervás, A.Sangrador, J.Fonstad, C. G.Gallium arsenideIII-V semiconductorsIndium compoundsLuminescenceMolecular beam epitaxial growthRapid thermal annealingReflection high energy electron diffractionSemiconductor epitaxial layersSemiconductor growthX-ray diffraction5 pages, 4 figures.-- PACS nrs.: 68.55.Ag; 81.15.Hi.Direct heteroepitaxial growth of InP layers on GaAs (001) wafers has been performed by solid-source molecular beam epitaxy assisted by monoatomic hydrogen (H*). The epitaxial growth has been carried out using a two-step method: for the initial stage of growth the temperature was as low as 200°C and different doses of H* were used; after this, the growth proceeded without H* while the temperature was increased slowly with time. The incorporation of H* drastically increased the critical layer thickness observed by reflection high-energy electron diffraction; it also caused a slight increase in the luminescence at room temperature, while it also drastically changed the low-temperature luminescence related to the presence of stoichiometric defects. The samples were processed by rapid thermal annealing. The annealing improved the crystalline quality of the InP layers measured by high-resolution x-ray diffraction, but did not affect their luminescent behavior significantly.The authors acknowledge support from the European Network of Excellence IST-2-511616-NOE (PHOREMOST) and NMP4-CT-2004-500101 SANDIE, Spain-Italy Integrated Action HI2004-367/IT2304, Projects NAN2004-08843-C05-04, TEC-2005-05781-C03-01, NAN2004-09109-C04-01, and CONSOLIDER-Ingenio 2010 (CSD2006-00019).Peer reviewedAmerican Institute of Physics200920092008info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501101156 bytesapplication/pdfhttp://hdl.handle.net/10261/11723reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://dx.doi.org/10.1063/1.2824967info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/117232026-05-22T06:33:51Z
dc.title.none.fl_str_mv Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy
title Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy
spellingShingle Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy
Postigo, Pablo Aitor
Gallium arsenide
III-V semiconductors
Indium compounds
Luminescence
Molecular beam epitaxial growth
Rapid thermal annealing
Reflection high energy electron diffraction
Semiconductor epitaxial layers
Semiconductor growth
X-ray diffraction
title_short Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy
title_full Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy
title_fullStr Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy
title_full_unstemmed Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy
title_sort Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy
dc.creator.none.fl_str_mv Postigo, Pablo Aitor
Suárez Arias, Ferrán
Sanz-Hervás, A.
Sangrador, J.
Fonstad, C. G.
author Postigo, Pablo Aitor
author_facet Postigo, Pablo Aitor
Suárez Arias, Ferrán
Sanz-Hervás, A.
Sangrador, J.
Fonstad, C. G.
author_role author
author2 Suárez Arias, Ferrán
Sanz-Hervás, A.
Sangrador, J.
Fonstad, C. G.
author2_role author
author
author
author
dc.subject.none.fl_str_mv Gallium arsenide
III-V semiconductors
Indium compounds
Luminescence
Molecular beam epitaxial growth
Rapid thermal annealing
Reflection high energy electron diffraction
Semiconductor epitaxial layers
Semiconductor growth
X-ray diffraction
topic Gallium arsenide
III-V semiconductors
Indium compounds
Luminescence
Molecular beam epitaxial growth
Rapid thermal annealing
Reflection high energy electron diffraction
Semiconductor epitaxial layers
Semiconductor growth
X-ray diffraction
description 5 pages, 4 figures.-- PACS nrs.: 68.55.Ag; 81.15.Hi.
publishDate 2008
dc.date.none.fl_str_mv 2008
2009
2009
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/11723
url http://hdl.handle.net/10261/11723
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://dx.doi.org/10.1063/1.2824967
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 101156 bytes
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,811543

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