Microstructural improvements of InP on GaAs „001… grown by molecular
The characterization of high quality InP on GaAs (001) fabricated by molecular beam epitaxy using a two-step growth method involving hydrogenation during growth is reported. Electron diffraction and high-resolution transmission electron microscopy confirm that ∼ 2 μm thick InP epilayers on GaAs are...
| Autores: | , , , , , |
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| Tipo de documento: | artigo |
| Data de publicação: | 2009 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositório: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/23579 |
| Acesso em linha: | http://hdl.handle.net/10261/23579 |
| Access Level: | Acceso aberto |
| Palavra-chave: | Dislocations Electron diffraction Hydrogenation III-V semiconductors Indium compounds Molecular beam epitaxial growth Rapid thermal annealing Semiconductor epitaxial layers Semiconductor growth Stacking faults Transmission electron microscopy |
| Resumo: | The characterization of high quality InP on GaAs (001) fabricated by molecular beam epitaxy using a two-step growth method involving hydrogenation during growth is reported. Electron diffraction and high-resolution transmission electron microscopy confirm that ∼ 2 μm thick InP epilayers on GaAs are heteroepitaxial and strain relaxed. Stacking faults and threading dislocations are mostly confined near the InP/GaAs interface and their densities decrease monotonically toward the InP surface. Additionally, rapid-thermal annealing following growth is found to result in a marked reduction in the number of dislocations and the disappearance of planar defects. |
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