Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings

We present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer struct...

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Detalhes bibliográficos
Autores: Ouerghui, W., Martínez Pastor, Juan Pascual, Gomis, J., Melliti, A., Maaref, M. A., Granados, Daniel, García Martínez, Jorge Manuel
Formato: artículo
Fecha de publicación:2006
País:España
Recursos:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/17140
Acesso em linha:http://hdl.handle.net/10261/17140
Access Level:acceso abierto
Palavra-chave:Cr-III-V semiconductors
Multilayers
Superlattices
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spelling Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum ringsOuerghui, W.Martínez Pastor, Juan PascualGomis, J.Melliti, A.Maaref, M. A.Granados, DanielGarcía Martínez, Jorge ManuelCr-III-V semiconductorsMultilayersSuperlatticesWe present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer structures. The inter-ring carrier transfer can be possible by phonon assisted tunnelling from the ground state of the smallring family towards the big-ring family of the bimodal size distribution. This process is thermally activated in the range 40–80 K.This work was partially supported by Spanish MCyT Nanoself I and II projects TIC2002-04096-C03 and TEC2005-05781-C03-03, the SANDiE Network of excellence (Contract No. NMP4-CT-2004-500101) and the AECI Spain-Tunisia bilateral research action No. 2/04/R.Peer reviewedEDP Sciences200920092006info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501242724 bytesapplication/pdfhttp://hdl.handle.net/10261/17140reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://www.edpsciences.org/epjaphttp://dx.doi.org/10.1051/epjap:2006088info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/171402026-05-22T06:33:51Z
dc.title.none.fl_str_mv Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings
title Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings
spellingShingle Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings
Ouerghui, W.
Cr-III-V semiconductors
Multilayers
Superlattices
title_short Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings
title_full Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings
title_fullStr Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings
title_full_unstemmed Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings
title_sort Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings
dc.creator.none.fl_str_mv Ouerghui, W.
Martínez Pastor, Juan Pascual
Gomis, J.
Melliti, A.
Maaref, M. A.
Granados, Daniel
García Martínez, Jorge Manuel
author Ouerghui, W.
author_facet Ouerghui, W.
Martínez Pastor, Juan Pascual
Gomis, J.
Melliti, A.
Maaref, M. A.
Granados, Daniel
García Martínez, Jorge Manuel
author_role author
author2 Martínez Pastor, Juan Pascual
Gomis, J.
Melliti, A.
Maaref, M. A.
Granados, Daniel
García Martínez, Jorge Manuel
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Cr-III-V semiconductors
Multilayers
Superlattices
topic Cr-III-V semiconductors
Multilayers
Superlattices
description We present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer structures. The inter-ring carrier transfer can be possible by phonon assisted tunnelling from the ground state of the smallring family towards the big-ring family of the bimodal size distribution. This process is thermally activated in the range 40–80 K.
publishDate 2006
dc.date.none.fl_str_mv 2006
2009
2009
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/17140
url http://hdl.handle.net/10261/17140
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://www.edpsciences.org/epjap
http://dx.doi.org/10.1051/epjap:2006088
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 242724 bytes
application/pdf
dc.publisher.none.fl_str_mv EDP Sciences
publisher.none.fl_str_mv EDP Sciences
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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