Data and analysis files accompanying the paper: 'Engineered Ge profiles in Si/SiGe heterostructures for increased valley splitting'

The data sets are provided for the analysis of the raw data and subsequent creation of the figures presented in the manuscript 'Engineering' Ge profiles in Si/SiGe heterostructures for increased valley splitting. The data supports the characterisation of 2D transport measurements in Hetero...

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Detalles Bibliográficos
Autores: Stehouwer, Lucas E. A., Losert, Merrit P., Rigot, Maia, Degli Esposti, Davide, Martí-Sànchez, Sara, Rimbach-Russ, Maximillian, Arbiol, Jordi, Friesen, Mark, Scappucci, Giordano
Tipo de recurso: conjunto de datos
Fecha de publicación:2025
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/406018
Acceso en línea:http://hdl.handle.net/10261/406018
Access Level:acceso abierto
Palabra clave:Disorder
Quantum Hall
Si/SiGe
Silicon
Spin qubit
Valley splitting
Descripción
Sumario:The data sets are provided for the analysis of the raw data and subsequent creation of the figures presented in the manuscript 'Engineering' Ge profiles in Si/SiGe heterostructures for increased valley splitting. The data supports the characterisation of 2D transport measurements in Heterostructure field effect transistors. We probe valley splitting energy from quantum hall experiments and find a correlation between increased valley splitting and increased disorder.

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