Supporting information to: Engineering Ge Profiles in Si/SiGe Heterostructures for Increased Valley Splitting
Growth conditions of heterostructures A, B1, B2, and B3, STEM sample preparation and characterization, extraction of Ge concentration profiles from STEM and SIMS, description of H-FET measurements, valley-splitting simulations based on Ge concentration profiles of the quantum wells, SIMS data detail...
| Autores: | , , , , , , , , |
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| Tipo de recurso: | conjunto de datos |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/406010 |
| Acceso en línea: | http://hdl.handle.net/10261/406010 |
| Access Level: | acceso abierto |
| Palabra clave: | Increasing alloy scattering Variable energy separation Engineering ge profiles Splitting energy deterministically Quantum hall measurements Dot spin qubits Sige quantum wells Average valley splitting Spin qubits Walley splitting Particle energy Ge atoms Sige interface Sharp quantum Quantum dots Well interfaces Results motivate Linear correlation Level broadening Induced single Experimental realization Enhancement observed Dimensional systems Broad interfaces Bband valleys Alternative approach |
| Sumario: | Growth conditions of heterostructures A, B1, B2, and B3, STEM sample preparation and characterization, extraction of Ge concentration profiles from STEM and SIMS, description of H-FET measurements, valley-splitting simulations based on Ge concentration profiles of the quantum wells, SIMS data detailing SiGe compositions, extraction of the maximum electron density of each heterostructure, mobility–density results of multiple H-FETs for each heterostructure, magnetotransport measurements for heterostructures A, B1, and B3, and distribution of simulated valley-splitting energies in quantum dots |
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