Existence of electronic excitation enhanced crystallization in GeSb amorphous thin films upon ultrashort laser pulse irradiation
The energy density crystallization threshold of amorphous GeSb films has been studied for the first time as a function of the laser pulse duration in the range from 170 fs to 8 ns. The results obtained provide evidence of the existence of enhanced crystallization upon irradiation with pulses shorter...
| Autores: | , , , , |
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| Formato: | artículo |
| Fecha de publicación: | 1996 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/54239 |
| Acesso em linha: | http://hdl.handle.net/10261/54239 |
| Access Level: | acceso abierto |
| Resumo: | The energy density crystallization threshold of amorphous GeSb films has been studied for the first time as a function of the laser pulse duration in the range from 170 fs to 8 ns. The results obtained provide evidence of the existence of enhanced crystallization upon irradiation with pulses shorter than 800 fs, which is most likely related to electronic excitation effects. |
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