Fast crystallizing GeSb alloys for optical data storage
A systematic study is presented on the optical and structural transformations induced in amorphous Ge1-xSbx alloys with Sb contents in the 0.71≤x≤0.91 range by irradiation with 250 ns laser pulses. The results show that only those films richer in Sb than the eutectics (x=0.85) show appreciable optic...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1994 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/64541 |
| Acceso en línea: | http://hdl.handle.net/10261/64541 |
| Access Level: | acceso abierto |
| Sumario: | A systematic study is presented on the optical and structural transformations induced in amorphous Ge1-xSbx alloys with Sb contents in the 0.71≤x≤0.91 range by irradiation with 250 ns laser pulses. The results show that only those films richer in Sb than the eutectics (x=0.85) show appreciable optical contrast upon irradiation. The dominant role of Sb in the performances of this family of alloys is analyzed. The transition from a low-reflectivity amorphous phase to a high-reflectivity extended solid solution of Ge in crystalline Sb is shown to be the key for a new generation of fast reversible optical storage materials in which amorphous-crystalline cycling using ultrashort laser pulses is feasible. |
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