Influence of pulse duration on the amorphization of GeSb thin films under ultrashort laser pulses
The influence of pulse duration on the dynamics of laser-induced amorphization of crystalline, 25-nm-thick, GeSb films, with a range of 100 fs to 6 ns, was investigated. This dynamics of the phase change was performed using real-time reflectivity measurements with picosecond time resolution with a s...
| Autores: | , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2004 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/61544 |
| Acceso en línea: | http://hdl.handle.net/10261/61544 |
| Access Level: | acceso abierto |
| Sumario: | The influence of pulse duration on the dynamics of laser-induced amorphization of crystalline, 25-nm-thick, GeSb films, with a range of 100 fs to 6 ns, was investigated. This dynamics of the phase change was performed using real-time reflectivity measurements with picosecond time resolution with a streak camera. The time required for the completion of the transformation was found to be of the order ∼10-15 ns. The results show an increase in the pulse duration to 1.5-20 ps range, and a decrease up to the range of 400 ps in the transformation time. |
|---|