Silicon nitride stoichiometry tuning for visible photonic integrated components
In integrated photonics, silicon nitride-based devices operating in the visible range of light may experience auto-fluorescence, an undesired effect that can interfere with the propagating signal. In this article, a reduction in auto-fluorescence has been obtained by studying stoichiometric and sili...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2024 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/396119 |
| Acceso en línea: | http://hdl.handle.net/10261/396119 https://api.elsevier.com/content/abstract/scopus_id/85194713894 |
| Access Level: | acceso abierto |
| Palabra clave: | Argon Blue shift Fluorescence Photoluminescence http://metadata.un.org/sdg/9 Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation |
| Sumario: | In integrated photonics, silicon nitride-based devices operating in the visible range of light may experience auto-fluorescence, an undesired effect that can interfere with the propagating signal. In this article, a reduction in auto-fluorescence has been obtained by studying stoichiometric and silicon-rich silicon nitride, subjected to different post-thermal annealings in different atmospheres. Stoichiometric silicon nitride treated with rapid thermal annealing at 1100 °C in an argon atmosphere reduces the photoluminescence intensity of the material by 95%. Silicon-rich nitride shows a more stable photoluminescence response to different annealings and atmospheres than the stoichiometric. Compared to the stoichiometric material, the emission peaks experienced by the silicon-rich silicon nitride are red shifted between 140 and 190 nm, and the refractive index value is increased by 7% at 633 nm. Also, the interface effects have been studied, showing a remarkable contribution when the annealing is performed in an argon atmosphere, while no contribution from these effects is observed in a nitrogen atmosphere. Finally, taking advantage of the refractive index variation between nitrides, a vertical directional coupler using two asymmetric waveguides, one of each type of silicon nitride, has been designed and simulated, obtaining a coupling length of 9.8 μm with a coupling power of 95.8%, demonstrating the 3D integration capabilities of combining silicon nitride layers of variable composition. |
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