Diffusive representation and sliding mode control of charge trapping in Al2O3MOS capacitors
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to s...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2019 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/173880 |
| Acceso en línea: | https://hdl.handle.net/2117/173880 https://dx.doi.org/10.1109/TIE.2018.2890488 |
| Access Level: | acceso abierto |
| Palabra clave: | Very high speed integrated circuits Ionizing radiation MOS capacitors Aluminum oxide Predictive models Capacitors Threshold voltage Data models Circuits integrats d'alta velocitat -- Fonts d'alimentació Condensadors variables Radiació ionitzant Àrees temàtiques de la UPC::Enginyeria de la telecomunicació |
| Sumario: | © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
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