Closed-loop compensation of charge trapping induced by ionizing radiation in MOS capacitors
The objective of this work is to explore the capability of a charge trapping control loop to continuously compensate charge induced by ionizing radiation in the dielectric of MOS capacitors. To this effect, two devices made with silicon oxide have been simultaneously irradiated with gamma radiation:...
| Autores: | , , , , |
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| Formato: | artículo |
| Fecha de publicación: | 2017 |
| País: | España |
| Recursos: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/108041 |
| Acesso em linha: | https://hdl.handle.net/2117/108041 https://dx.doi.org/10.1109/TIE.2017.2748033 |
| Access Level: | acceso abierto |
| Palavra-chave: | Industrial electronics Metal oxide semiconductors Capacitance Capacitance-voltage characteristics Charge trapping control CDielectrics Ionizing radiation MIS capacitors Modulation MOS capacitors Radiation effects Sigma-delta modulation Electrònica industrial Metall-òxid-semiconductors Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors |
| Resumo: | The objective of this work is to explore the capability of a charge trapping control loop to continuously compensate charge induced by ionizing radiation in the dielectric of MOS capacitors. To this effect, two devices made with silicon oxide have been simultaneously irradiated with gamma radiation: one with constant voltage bias, and the other working under a dielectric charge control. The experiment shows substantial charge trapping in the uncontrolled device whereas, at the same time, the control loop is able to compensate the charge induced by gamma radiation in the second device. |
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