Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells

Producción Científica

Detalles Bibliográficos
Autores: Landesman, Jean-Pierre, Jiménez López, Juan Ignacio, Levallois, Christophe, Pommereau, Frédéric, Frigeri, Cesare, Torres, Alfredo, Le Ger, Yoan, Beck, Alexandre, Rhallabi, Ahmed
Tipo de recurso: artículo
Fecha de publicación:2016
País:España
Institución:Universidad de Valladolid
Repositorio:UVaDOC. Repositorio Documental de la Universidad de Valladolid
OAI Identifier:oai:uvadoc.uva.es:10324/21758
Acceso en línea:https://doi.org/10.1116/1.4950445
http://uvadoc.uva.es/handle/10324/21758
Access Level:acceso abierto
Palabra clave:Quantum wells
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network_name_str España
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dc.title.none.fl_str_mv Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells
title Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells
spellingShingle Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells
Landesman, Jean-Pierre
Quantum wells
title_short Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells
title_full Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells
title_fullStr Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells
title_full_unstemmed Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells
title_sort Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells
dc.creator.none.fl_str_mv Landesman, Jean-Pierre
Jiménez López, Juan Ignacio
Levallois, Christophe
Pommereau, Frédéric
Frigeri, Cesare
Torres, Alfredo
Le Ger, Yoan
Beck, Alexandre
Rhallabi, Ahmed
author Landesman, Jean-Pierre
author_facet Landesman, Jean-Pierre
Jiménez López, Juan Ignacio
Levallois, Christophe
Pommereau, Frédéric
Frigeri, Cesare
Torres, Alfredo
Le Ger, Yoan
Beck, Alexandre
Rhallabi, Ahmed
author_role author
author2 Jiménez López, Juan Ignacio
Levallois, Christophe
Pommereau, Frédéric
Frigeri, Cesare
Torres, Alfredo
Le Ger, Yoan
Beck, Alexandre
Rhallabi, Ahmed
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Quantum wells
topic Quantum wells
description Producción Científica
publishDate 2016
dc.date.none.fl_str_mv 2016
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://doi.org/10.1116/1.4950445
http://uvadoc.uva.es/handle/10324/21758
url https://doi.org/10.1116/1.4950445
http://uvadoc.uva.es/handle/10324/21758
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://avspublications.org/jvsta/
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv AIP Publishing
publisher.none.fl_str_mv AIP Publishing
dc.source.none.fl_str_mv reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname:Universidad de Valladolid
instname_str Universidad de Valladolid
reponame_str UVaDOC. Repositorio Documental de la Universidad de Valladolid
collection UVaDOC. Repositorio Documental de la Universidad de Valladolid
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869422677120253952
spelling Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wellsLandesman, Jean-PierreJiménez López, Juan IgnacioLevallois, ChristophePommereau, FrédéricFrigeri, CesareTorres, AlfredoLe Ger, YoanBeck, AlexandreRhallabi, AhmedQuantum wellsProducción CientíficaThe general objective is the investigation of the defects formed by dry etching tools such as those involved in the fabrication of photonic devices with III–V semiconductors. Emphasis is put on plasma exposures with chlorine-based chemistries. In addition to identifying these defects and describing their effects on the electro-optic and structural properties, the long-term target would be to predict the impact on the parameters of importance for photonic devices, and possibly include these predictions in their design. The work is first centered on explaining the experimental methodology. This methodology starts with the design and growth of a quantum well structure on indium phosphide, including ternary indium arsenide/phosphide quantum wells with graded arsenic/phosphor composition. These samples have then been characterized by luminescence methods (photo- and cathodoluminescence), high-resolution transmission electron microscopy, and secondary ion mass spectrometry. As one of the parameters of importance in this study, the authors have also included the doping level. The samples have been exposed to the etching plasmas for “short” durations that do not remove completely the quantum wells, but change their optical signature. No masking layer with lithographic features was involved as this work is purely oriented to study the interaction between the plasma and the samples. A significant difference in the luminescence spectra of the as-grown undoped and doped samples is observed. A mechanism describing the effect of the built-in electric field appearing as a consequence of the doping profile is proposed. This mechanism involves quantum confined Stark effect and electric-field induced carrier escape from the quantum wells. In the following part, the effects of exposure to various chlorine-based plasmas were explored. Differences are again observed between the undoped and doped samples, especially for chemistries containing silicon tetrachloride. Secondary ion mass spectrometry indicates penetration of chlorine in the structures. Transmission electron microscopy is used to characterize the quantum well structure before and after plasma bombardment. By examining carefully the luminescence spectral properties, the authors could demonstrate the influence of the etching plasmas on the built-in electric field (in the case of doped samples), and relate it to some ionic species penetrating the structures. Etching plasmas involving both chlorine and nitrogen have also been studied. The etching rate for these chemistries is much slower than for some of the silicon tetrachloride based chemistries. Their effects on the samples are also very different, showing much reduced effect on the built-in electric field (for the doped samples), but significant blue-shifts of the luminescence peaks that the authors attributed to the penetration of nitrogen in the structures. Nitrogen, in interstitial locations, induces mechanical compressive stress that accounts for the blue-shifts. Finally, from the comparison between secondary ion mass spectrometry and luminescence spectra, the authors suggest some elements for a general mechanism involved in the etching by chloride-chemistries, in which a competition takes place between the species at the surface, active for the etching mechanism, and the species that penetrate the structure, lost for the etching process, but relevant in terms of impact on the electro-optic and structural features of the exposed materials.Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA302U13)AIP Publishing2016info:eu-repo/semantics/articleapplication/pdfhttps://doi.org/10.1116/1.4950445http://uvadoc.uva.es/handle/10324/21758reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolidinstname:Universidad de ValladolidIngléshttp://avspublications.org/jvsta/info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0/oai:uvadoc.uva.es:10324/217582026-06-13T12:44:47Z
score 15,300719

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