Cathodoluminescence characterization of rare earth doped composite materials based on porous GaP

Porous GaP layers doped with erbium or europium elements have been obtained by electrochemical etching and further impregnation processes. The thermal treatments for optical activation of rare earth (RE) ions lead to partial oxidation of porous GaP skeleton and a composite material is obtained. The...

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Detalhes bibliográficos
Autores: Sánchez, Borja, Méndez Martín, María Bianchi, Piqueras De Noriega, Francisco Javier, Sirbu, Lilian, Tiginyanu, Ion, Ursaki, Veaceslav
Tipo de documento: artigo
Data de publicação:2008
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositório:Docta Complutense
Idioma:inglês
OAI Identifier:oai:docta.ucm.es:20.500.14352/50940
Acesso em linha:https://hdl.handle.net/20.500.14352/50940
Access Level:Acceso aberto
Palavra-chave:538.9
Semiconductors
Luminescence
Photoluminescence
Silicon
Física de materiales
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spelling Cathodoluminescence characterization of rare earth doped composite materials based on porous GaPSánchez, BorjaMéndez Martín, María BianchiPiqueras De Noriega, Francisco JavierSirbu, LilianTiginyanu, IonUrsaki, Veaceslav538.9SemiconductorsLuminescencePhotoluminescenceSiliconFísica de materialesPorous GaP layers doped with erbium or europium elements have been obtained by electrochemical etching and further impregnation processes. The thermal treatments for optical activation of rare earth (RE) ions lead to partial oxidation of porous GaP skeleton and a composite material is obtained. The presence of ErPO_4 and EuPO_4 oxide nanophases is detected by X-ray diffraction (XRD) analysis. Visible luminescence from RE ions in the composite material has been investigated by means of the cathodoluminescence (CL) technique in the scanning electron microscope. Intense red and green emission lines characteristic from Er^3 and Eu^3 ions dominate the CL spectra in the case of parallel and regular nanotubes in the samples. The role of the oxygen content and the detected phases in the luminescence results are discussed.Springer NetherlandsUniversidad Complutense de Madrid20082008-01-0120082008-01-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/50940reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/509402026-06-02T12:44:21Z
dc.title.none.fl_str_mv Cathodoluminescence characterization of rare earth doped composite materials based on porous GaP
title Cathodoluminescence characterization of rare earth doped composite materials based on porous GaP
spellingShingle Cathodoluminescence characterization of rare earth doped composite materials based on porous GaP
Sánchez, Borja
538.9
Semiconductors
Luminescence
Photoluminescence
Silicon
Física de materiales
title_short Cathodoluminescence characterization of rare earth doped composite materials based on porous GaP
title_full Cathodoluminescence characterization of rare earth doped composite materials based on porous GaP
title_fullStr Cathodoluminescence characterization of rare earth doped composite materials based on porous GaP
title_full_unstemmed Cathodoluminescence characterization of rare earth doped composite materials based on porous GaP
title_sort Cathodoluminescence characterization of rare earth doped composite materials based on porous GaP
dc.creator.none.fl_str_mv Sánchez, Borja
Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
Sirbu, Lilian
Tiginyanu, Ion
Ursaki, Veaceslav
author Sánchez, Borja
author_facet Sánchez, Borja
Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
Sirbu, Lilian
Tiginyanu, Ion
Ursaki, Veaceslav
author_role author
author2 Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
Sirbu, Lilian
Tiginyanu, Ion
Ursaki, Veaceslav
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Semiconductors
Luminescence
Photoluminescence
Silicon
Física de materiales
topic 538.9
Semiconductors
Luminescence
Photoluminescence
Silicon
Física de materiales
description Porous GaP layers doped with erbium or europium elements have been obtained by electrochemical etching and further impregnation processes. The thermal treatments for optical activation of rare earth (RE) ions lead to partial oxidation of porous GaP skeleton and a composite material is obtained. The presence of ErPO_4 and EuPO_4 oxide nanophases is detected by X-ray diffraction (XRD) analysis. Visible luminescence from RE ions in the composite material has been investigated by means of the cathodoluminescence (CL) technique in the scanning electron microscope. Intense red and green emission lines characteristic from Er^3 and Eu^3 ions dominate the CL spectra in the case of parallel and regular nanotubes in the samples. The role of the oxygen content and the detected phases in the luminescence results are discussed.
publishDate 2008
dc.date.none.fl_str_mv 2008
2008-01-01
2008
2008-01-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/50940
url https://hdl.handle.net/20.500.14352/50940
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Springer Netherlands
publisher.none.fl_str_mv Springer Netherlands
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869422640462036992
score 15.301603

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