Cathodoluminescence characterization of rare earth doped composite materials based on porous GaP
Porous GaP layers doped with erbium or europium elements have been obtained by electrochemical etching and further impregnation processes. The thermal treatments for optical activation of rare earth (RE) ions lead to partial oxidation of porous GaP skeleton and a composite material is obtained. The...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2008 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/50940 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/50940 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Semiconductors Luminescence Photoluminescence Silicon Física de materiales |
| Sumario: | Porous GaP layers doped with erbium or europium elements have been obtained by electrochemical etching and further impregnation processes. The thermal treatments for optical activation of rare earth (RE) ions lead to partial oxidation of porous GaP skeleton and a composite material is obtained. The presence of ErPO_4 and EuPO_4 oxide nanophases is detected by X-ray diffraction (XRD) analysis. Visible luminescence from RE ions in the composite material has been investigated by means of the cathodoluminescence (CL) technique in the scanning electron microscope. Intense red and green emission lines characteristic from Er^3 and Eu^3 ions dominate the CL spectra in the case of parallel and regular nanotubes in the samples. The role of the oxygen content and the detected phases in the luminescence results are discussed. |
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