Cathodoluminescence from nanocrystalline silicon films and porous silicon
Luminescence emission of nanocrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As-deposited films show a dominant band at 400 nm as well as a band centered at about 650 nm. CL spectra of porous silicon samples also show emission at 400 nm. Sp...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1999 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/58945 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/58945 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Luminescence Properties Photoluminescence Emission Si Física de materiales |
| Sumario: | Luminescence emission of nanocrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As-deposited films show a dominant band at 400 nm as well as a band centered at about 650 nm. CL spectra of porous silicon samples also show emission at 400 nm. Spectral changes induced by annealing and implantation treatments of the films suggest that the presence of nanocrystals is the origin of the observed CL. |
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