Excitons in coupled InAs/InP self-assembled quantum wires
Optical transitions in coupled InAs/InP self-assembled quantum wires are studied within the single-band effective-mass approximation including effects due to strain. Both vertically and horizontally coupled quantum wires are investigated and the ground state, excited states, and the photoluminescenc...
| Autores: | , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2007 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/12273 |
| Acceso en línea: | http://hdl.handle.net/10261/12273 |
| Access Level: | acceso abierto |
| Palabra clave: | Excitons Indium compounds III-V semiconductors Semiconductor quantum wires Ground states Excited states Photoluminescence |
| Sumario: | Optical transitions in coupled InAs/InP self-assembled quantum wires are studied within the single-band effective-mass approximation including effects due to strain. Both vertically and horizontally coupled quantum wires are investigated and the ground state, excited states, and the photoluminescence peak energies are calculated. Where possible, we compare with available photoluminescence data from which it was possible to determine the height of the quantum wires. An anticrossing of the energy of excited states is found for vertically coupled wires signaling a change of symmetry of the exciton wave function. This crossing is the signature of two different coupling regimes. |
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