Influence of electrical operating conditions and active layer thickness on electroluminescence degradation in polyfluorene-phenylene based light emitting diodes

We have studied the influence of the electrical working conditions (voltage or current biased). and the active layer thickness on electroluminescence (EL) properties of polymeric light emitting diodes based on poly-[9,9-bis(6'-cyanohexyl)-2,7-fluorene-alt-co-1,4-phenylene], [PFP:(CN)(2)]. Diode...

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Detalles Bibliográficos
Autores: Romero, Beatriz, Arredondo, Belén, Alvarez, Angel Luis, Mallavia, Ricardo, Salinas, A, Quintana, Xabier, O, José Manuel
Tipo de recurso: artículo
Fecha de publicación:2009
País:España
Institución:Universidad Rey Juan Carlos
Repositorio:BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos
OAI Identifier:oai:burjcdigital.urjc.es:10115/12052
Acceso en línea:http://hdl.handle.net/10115/12052
Access Level:acceso abierto
Palabra clave:Polymer light emitting diodes
Degradation
Polyfluorene
3307 Tecnología Electrónica
3306.02 Aplicaciones Eléctricas
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spelling Influence of electrical operating conditions and active layer thickness on electroluminescence degradation in polyfluorene-phenylene based light emitting diodesRomero, BeatrizArredondo, BelénAlvarez, Angel LuisMallavia, RicardoSalinas, AQuintana, XabierO, José ManuelPolymer light emitting diodesDegradationPolyfluorene3307 Tecnología Electrónica3306.02 Aplicaciones EléctricasWe have studied the influence of the electrical working conditions (voltage or current biased). and the active layer thickness on electroluminescence (EL) properties of polymeric light emitting diodes based on poly-[9,9-bis(6'-cyanohexyl)-2,7-fluorene-alt-co-1,4-phenylene], [PFP:(CN)(2)]. Diodes with different active layer thicknesses (55-140 nm) have been fabricated and characterized. Temporal evolution of the spectra at constant bias and current, as well as the spectral evolution with the current, has been performed. Excitation photoluminescence has been used to discriminate between intrinsic and defect-related transitions. The relative spectral area arising from defects has been quantified by means of Gaussian deconvolution for different device excitations. Active layer thickness has been observed to play an important role on the emissive spectral shape. In thick samples EL tends to resemble fluorescence from the pristine material. In contrast, thinner samples clearly show two additional bands related to defects: the first one is structured in the range 470-510 nm, which is proposed to be due to electron accumulation in the active layer, and a second band at 535 nm. arising from on-chain keto defects due to the presence of oxygen. The role of the electron blocking character of the PEDOT:PSS on the spectral shape, as well as the influence of the active layer thickness on the oxygen concentration, are discussedTecnología ElectrónicaElsevier201420142009info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10115/12052reponame:BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlosinstname:Universidad Rey Juan CarlosInglésS2009/MAT-1756Atribución-NoComercial-SinDerivadas 3.0 Españahttp://creativecommons.org/licenses/by-nc-nd/3.0/es/info:eu-repo/semantics/openAccessoai:burjcdigital.urjc.es:10115/120522026-06-24T12:48:17Z
dc.title.none.fl_str_mv Influence of electrical operating conditions and active layer thickness on electroluminescence degradation in polyfluorene-phenylene based light emitting diodes
title Influence of electrical operating conditions and active layer thickness on electroluminescence degradation in polyfluorene-phenylene based light emitting diodes
spellingShingle Influence of electrical operating conditions and active layer thickness on electroluminescence degradation in polyfluorene-phenylene based light emitting diodes
Romero, Beatriz
Polymer light emitting diodes
Degradation
Polyfluorene
3307 Tecnología Electrónica
3306.02 Aplicaciones Eléctricas
title_short Influence of electrical operating conditions and active layer thickness on electroluminescence degradation in polyfluorene-phenylene based light emitting diodes
title_full Influence of electrical operating conditions and active layer thickness on electroluminescence degradation in polyfluorene-phenylene based light emitting diodes
title_fullStr Influence of electrical operating conditions and active layer thickness on electroluminescence degradation in polyfluorene-phenylene based light emitting diodes
title_full_unstemmed Influence of electrical operating conditions and active layer thickness on electroluminescence degradation in polyfluorene-phenylene based light emitting diodes
title_sort Influence of electrical operating conditions and active layer thickness on electroluminescence degradation in polyfluorene-phenylene based light emitting diodes
dc.creator.none.fl_str_mv Romero, Beatriz
Arredondo, Belén
Alvarez, Angel Luis
Mallavia, Ricardo
Salinas, A
Quintana, Xabier
O, José Manuel
author Romero, Beatriz
author_facet Romero, Beatriz
Arredondo, Belén
Alvarez, Angel Luis
Mallavia, Ricardo
Salinas, A
Quintana, Xabier
O, José Manuel
author_role author
author2 Arredondo, Belén
Alvarez, Angel Luis
Mallavia, Ricardo
Salinas, A
Quintana, Xabier
O, José Manuel
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Polymer light emitting diodes
Degradation
Polyfluorene
3307 Tecnología Electrónica
3306.02 Aplicaciones Eléctricas
topic Polymer light emitting diodes
Degradation
Polyfluorene
3307 Tecnología Electrónica
3306.02 Aplicaciones Eléctricas
description We have studied the influence of the electrical working conditions (voltage or current biased). and the active layer thickness on electroluminescence (EL) properties of polymeric light emitting diodes based on poly-[9,9-bis(6'-cyanohexyl)-2,7-fluorene-alt-co-1,4-phenylene], [PFP:(CN)(2)]. Diodes with different active layer thicknesses (55-140 nm) have been fabricated and characterized. Temporal evolution of the spectra at constant bias and current, as well as the spectral evolution with the current, has been performed. Excitation photoluminescence has been used to discriminate between intrinsic and defect-related transitions. The relative spectral area arising from defects has been quantified by means of Gaussian deconvolution for different device excitations. Active layer thickness has been observed to play an important role on the emissive spectral shape. In thick samples EL tends to resemble fluorescence from the pristine material. In contrast, thinner samples clearly show two additional bands related to defects: the first one is structured in the range 470-510 nm, which is proposed to be due to electron accumulation in the active layer, and a second band at 535 nm. arising from on-chain keto defects due to the presence of oxygen. The role of the electron blocking character of the PEDOT:PSS on the spectral shape, as well as the influence of the active layer thickness on the oxygen concentration, are discussed
publishDate 2009
dc.date.none.fl_str_mv 2009
2014
2014
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10115/12052
url http://hdl.handle.net/10115/12052
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv S2009/MAT-1756
dc.rights.none.fl_str_mv Atribución-NoComercial-SinDerivadas 3.0 España
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Atribución-NoComercial-SinDerivadas 3.0 España
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos
instname:Universidad Rey Juan Carlos
instname_str Universidad Rey Juan Carlos
reponame_str BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos
collection BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos
repository.name.fl_str_mv
repository.mail.fl_str_mv
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